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| SavantIC Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION *With TO-3PN package *Fast switching speed *Wide area of safe operation *High voltage,high reliability APPLICATIONS *For switching regulator applications PINNING(see Fig.2) PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SC4110 Fig.1 simplified outline (TO-3PN) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL VCBO VCEO VEBO IC ICP IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current TC=25 PC Collector power dissipation Ta=25 Tj Tstg Junction temperature Storage temperature 2.5 150 -55~150 Open emitter Open base Open collector CONDITIONS VALUE 500 400 7 25 40 8 160 W UNIT V V V A A A SavantIC Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Output capacitance CONDITIONS IC=10mA ;RBE=< IC=1mA; IE=0 IE=1mA; IC=0 IC=16A; IB=3.2A IC=16A; IB=3.2A VCB=400V; IE=0 VEB=5V; IC=0 IC=3.2A ; VCE=5V IC=16A ; VCE=5V IC=10mA ; VCE=5V IC=3.2A ; VCE=10V IE=0; VCB=10V,f=1MHz 15 10 10 MIN 400 500 7 2SC4110 SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCE(sat) VBE(sat) ICBO IEBO hFE-1 hFE-2 hFE-3 fT Cob TYP. MAX UNIT V V V 0.8 1.5 10 10 50 V V A A 20 300 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=20A; IB1=4A;IB2=-8A RL=10C;VCC=200V 0.5 2.5 0.3 s s s 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SC4110 Fig.2 outline dimensions (unindicated tolerance:0.1mm) 3 |
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